Introduction

eMemory's NeoFlash is a true logic-based single poly embedded flash memory solution. With only 2~3 additional non-critical masks, NeoFlash can be implemented seamlessly on CMOS logic processes, especially in advanced node. Due to its simple process, robust design and low cost, NeoFlash is promising as an embedded flash solution for system-on-a-chip applications.

Technical Principles

NeoFlash consists of two p-channel transistors in series; one is the thick-gate transistor for selection, and the other is the SONOS transistor for data storage.

NeoFlash provides outstanding program and erase performance with superior reliability and data retention. NeoFlash utilizes hot electron injection for fast programming and a channel Fowler-Nordheim (F-N) tunneling mechanism for uniform erasing, so that both the speed and reliability requirements of emerging high-speed embedded NVM applications can be met. Programming mechanism of a NeoFlash cell is typically channel hot-hole induced hot-electron injection. The accumulated electrons in its silicon nitride storage layer pinches-off the channel below it starting from drain side toward source side. This channel length self-modulation minimizes the programming stress of gate oxide. It means superior retention comparing with N-type SONOS flash device. As for erasing a NeoFlash cell, Channel F-N tunneling is chosen. It’s a well-known for various kind of Flashes.

Benefits

Due to its sophisticated design, NeoFlash avoids the operation window drift and closure issues commonly associated with flash technologies of the same type. In addition, the maximum operating voltage for NeoFlash is only 6V, which means there is no need for the high-voltage-related processing necessary in other embedded flash solutions.

NeoFlash can be embedded in CMOS logic process with only 2~3 additional non-critical masks. Compared to floating gate flash technology, which requires a complex and expensive double poly process (need extra ~11 mask layers), the single poly architecture and reduced fabrication complexity of NeoFlash give it powerful advantages in the embedded flash category, especially in advanced node.

Application

NeoFlash is the best solution for code storage & parameter setting. In MCU-like chip, NeoFlash provide best cost structure with large flash density in MCU chip for code storage. In many sensor controllers, they need to record sensor characteristics provided by different vendors for best system performance. NeoFlash provide a wide density range (16Kbits~2Mbits) in this kinds of application

Product

eMemory has developed Flash HD series with density larger than 256Kbits by NeoFlash technology in three major foundries and two IDMs.

Support

eMemory has good and strong experience to transfer NeoFlash technology to different foundry/IDM and different process nodes. An experienced NeoFlash technology development team with process, device, testing, qualification and design engineers inside has been established in eMemory for several years. They have successfully built up NeoFlash technology in main foundries & IDMs in the world.

eMemory and its partner foundries provide technical support and foundry-guaranteed quality, so that incorporating embedded flash into an IC design can be extremely efficient and reliable.